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153  Articles
1 of 16 pages  |  10  records  |  more records»
In this study we investigated depth distributions of elements in the multilayer structures of TiO2_2/SiO2_2/Si before and after ion irradiation. The samples were implanted with Ne+^+, Ar+^+, Kr+^+ and Xe+^+ ions. For each implantation the multilayer struc... see more

This paper presents the results of an experimental study of three samples containing various elements in the near-surface layers. The depth profiles of all the elements of different atomic masses from hydrogen to silver were investigated by... see more

Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2... see more

Transition-metal doped Indium Phosphide (InP) has been studied over several decades for utilization in optoelectronics applications. Recently, interesting magnetic properties have been reported for metal clusters formed at different depths surrounded by a... see more

Rutherford back-scattering (RBS) and Medium Energy Ion Scattering (MEIS) have been used todetermine the lattice site occupancy of antimony (Sb) implanted into silicon (Si) and strainedsilicon (sSi) for ion energies of 2keV to 40keV. After annealing in the... see more

Swift heavy ions of Au at 120 MeV are irradiated at the interface of Si/Me/Si (Me=V,Fe,Co) and the behaviour of mixing examined wrt to different ion doses. The fluences were varied from 1x1013 ions/cm2 to 1x1014 ions/cm2 on the multilayers of Si/Me/Se (Me... see more

The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The el... see more

For the efficient absorption of light in a broad wavelength band, Si photovoltaic devices require a high concentration of metal atoms at a shallow depth up to a few 10s of nm in the Si substrates. Low energy (< 50 keV) implantation of Ag ions in Si is ... see more

gas sensing property of TiO2 thin films have been demonstrated in rutile-TiO2 (100) films grown on the a-Al2O3 (0001)substrates by Pulsed Laser Deposition (PLD). High quality rutile-TiO2 (100) films were successfully grown on a-Al2O3(0001) with the substr... see more

1 of 16 pages  |  10  records  |  more records»