Study of Elemental Depth Distribution in the Multilayer Material TiO2\text{TiO}_2/SiO2\text{SiO}_2/Si by Rutherford Backscattering Spectrometry (RBS)

SUMMARY

In this study we investigated depth distributions of elements in the multilayer structures of TiO2_2/SiO2_2/Si before and after ion irradiation. The samples were implanted with Ne+^+, Ar+^+, Kr+^+ and Xe+^+ ions. For each implantation the multilayer structures were irradiated by the ions with the energy 100, 150, 200 and 250 keV. The elemental concentrations in the samples were analyzed by the Rutherford Backscattering Spectrometry (RBS) method. It was found that the transition layers existed between the TiO2_2 and SiO2_2 layers. Formation of these layers derived from the ion beam mixing that was occurred at TiO2_2/SiO2_2 interface after irradiation process. The depth profiles show that thickness of the transition layers increased with the growing energy and atomic mass of the implanted ions.