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225  Articles
1 of 23 pages  |  10  records  |  more records»
Electronic sputtering of carbon from hydrogenated amorphous carbon (a-C:H/Si) film and oxygen from copper oxide (CuO/Si) film at different electronic energy loss (Se) value is reported. The sputtering is monitored by online elastic recoil detection analys... see more

Battery waste is one of waste that can damage the environment and there has not been much good processing in Indonesia. Even though, battery waste contains carbon which can be used as a target material for deposition of carbon films using plasma sputterin... see more

Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by... see more

In the present work, thin films of Cr/NiO/Ni are deposited on glass substrates using RF magnetron sputtering technique. The uniformity and homogeneity of the prepared films were controlled by varying the power of the source, the target-substrate distance ... see more

In this survey, the magnetron sputtering with Dc. Pulsed mode was embroiled to deposit TiAlN thin film on AISI 316 as a substrate. All the plasma magnetron parameters were fixed excluding the nitrogen gas ratio which was varied from 10% to 50% with step i... see more

In this paper we report the results of studies relating to the synthesis of Cobalt Ferrite (CoFe2O4) thin films by a sputtering method. The CoFe2O4 thin film has been prepared onto silicon substrate from the sputtering targets, CoFe. Structural properties... see more

The objective of this study is to assess the influence of nano-particle Fe2O3 thin film thickness on some physical properties which were prepared by magnetron DC- sputtering on glass substrate at room temperature. The structure was tested with X-Ray diffr... see more

A droplet sputtering of heavy metals by heavy ions in energy range of elastic loss domination is theoretically investigated. It is shown that the droplet sputtering is possible at ion energies  both below and above the maximum permissible energy of n... see more

Reactive sputter processes frequently exhibit stability problems. The cause of this is that these processes normally exhibit hysteresis effects in the processing curves. Eliminating or decreasing the hysteresis would significantly simplify the use of reac... see more

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