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4.279  Articles
1 of 429 pages  |  10  records  |  more records»
The article examines the problems of thermal oxidation of silicon. Oxidation plays an important role in planar technology, which in turn is the basis of the technology of silicon integrated circuits, photodetectors and other solid-state electronics. Durin... see more

The paper presents the results of studies of the effect of silicon surface treatment on the electrical and photoelectric properties of nanostructured MoOx/n-Si heterojunctions. The nanostructured heterojunctions MoOx/n-Si, were prepared by deposition of t... see more

Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm–0.7 mm. Porous silicon technologies were ada... see more

Porous silicon layers were prepared by both chemical and electrochemical methods on n- and ptype Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the pr... see more

Domain-specific accelerators are a reaction adapting to device scaling and the dark silicon era. This paper describes a radar signal processing oriented configurable accelerator and the application space exploration of the system. The system is built arou... see more

Tensile-strained Ge is a possible laser material for Si integrated circuits, but reports of lasers using tensile Ge show high threshold current densities and short lifetimes. To study the origins of these shortcomings, Ge ridge waveguides with tensile str... see more

  Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanomet... see more

The SiO molecule is the most widespread silicon-bearing molecule in the interstellar medium. Its largest abundances are found in regions of star formation, whereas its abundance is very low in quiescent cold dark clouds. The major source of SiO in the “sh... see more

The Hot Wire Cell PECVD method has been developed and successfully applied to grow the hydrogenated amorphous silicon (a-Si:H) thin films with a relatively high conductivity. The a-Si:H thin films were grown on the 7059 corning glass at a filament tempera... see more

1 of 429 pages  |  10  records  |  more records»