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4.231  Articles
1 of 424 pages  |  10  records  |  more records»
Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, ... see more

The article examines the problems of thermal oxidation of silicon. Oxidation plays an important role in planar technology, which in turn is the basis of the technology of silicon integrated circuits, photodetectors and other solid-state electronics. Durin... see more

This work is devoted to the study of the catalytic properties of Al2O3 and SiO2 in the process of thermal conversion of ethanol, as well as to the determination of the acid characteristics of these oxides The catalytic properties of oxides in the thermal ... see more

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon substrates by  thermal evaporation technique. X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed t... see more

The paper presents the results of studies of the effect of silicon surface treatment on the electrical and photoelectric properties of nanostructured MoOx/n-Si heterojunctions. The nanostructured heterojunctions MoOx/n-Si, were prepared by deposition of t... see more

In this study, we used silicon (Si, in the form of K2SiO3, 2 mM) to alleviate the toxicity of aluminum oxide (Al2O3) nanoparticles (NPs) in barley (Hordeum vulgare L.). Using Inductively Coupled Plasma-Mass Spectroscopy (ICP-MS) analyses, we showed that t... see more

emiconductor nanostructures such as quantum wells, quantum wires or quantum dots exhibit superior properties in comparison to their bulk forms. Quantum dots are described aszero-dimensional electron gas system, as carriers are confined in all the three di... see more

Polycrystalline antimony doped and undoped tin oxide thin films are grown by chemical vapor deposition on multicrystalline silicon and on glass substrates. The latter substrate was considered for comparative study on growth and characterization. The dopin... see more

The subject of the study is oxide-semiconductor capacitors, which are widely used in the manufacture of electronic equipment. The goal of the study is to determine the main causes of failures of oxide-semiconductor capacitors at the production and operati... see more

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