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5  Articles
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El objetivo de este trabajo es proporcionar a los estudiantes de electrónica, computación y áreas afines, un panorama de la construcción y funcionamiento de los transistores de efecto de campo de aleta (FinFET), los cuales son dispositivos extremadamente ... see more

The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The impact of a high-k gate dielectric on the device short channel performance and scalability of nanoscale double gate Fin Field Effect Transistors (FinFET) C... see more

A novel design of triple gate MOSFET structure with metal gate and an underlap channel is proposed to minimise the short channel and corner effects. The gate metal used is titanium nitride as well as source and drain is diffused with titanium nitride so a... see more

Optical beam has been the veteran inspector of semiconductor wafer production house, ever since the birth of integrated circuit (IC). As technology and market place raise the bar on chip density, Moore’s law stretches to the limit. Due to its inherent phy... see more

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