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49  Articles
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Nanoindentation creep studies were performed on Hg1-xCdxTe (x~0.29) epitaxial films using different loading rates of 0.5 mN.s-1, 1 mN.s-1, 2 mN.s-1 and 4 mN.s-1, keeping a constant peak load of 10 mN. A constant hold time of 20 sec at peak load was mainta... see more

Continuous diamond films with low dislocation density were obtained by two-step epitaxial lateral overgrowth (ELO). Grooves were fabricated by inductively coupled plasma etching. Mo/Pd stripes sputtered in the grooves were used to inhibit the propagation ... see more

Recent progress in computational materials science in the area of semiconductor epitaxial growth is reviewed. Reliable prediction can now be made for a wide range of problems, such as surface reconstructions, adsorption-desorption behavior, and growth pro... see more

We used large area, monolayer graphene epitaxially grown on SiC (0001) as contact electrodes for polymer nanofiber devices. Our fabrication process, which avoids polymer resist residues on the graphene surface, results in graphene-polyaniline nanofiber de... see more

Polyamide 66 (PA66) was chosen as the representative of hydrophilic polymers, to investigate the influence of epitaxial crystals in semi-crystalline polymers/reduced graphene oxide nanocomposite injection-molding bars. A differential scanning calorimeter ... see more

We report on a novel method to fabricate composition gradient, epitaxial La1-xSrxMnO3 thin films with the objective to alleviate biaxial film strain. In this work, epitaxial, composition gradient La1-xSrxMnO3, and pure LaMnO3 and La0.67Sr0.33MnO3 thin fil... see more

This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of t... see more

We report on successful growth of epitaxial and high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate c... see more

The magnetic microstructure of the yttrium iron garnet epitaxial films surface layer were studied by conversion electronic Mossbauer  spectroscopy method. The presence of two magnetically non-equvivalent positions of Fe3+ ions in tetrahedral sites of... see more

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