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39.362  Articles
1 of 3.937 pages  |  10  records  |  more records»
Advances in Electronics and Optics are often preceded by discoveries in Crystal Growth theory and practice. This article represents in retrospect some of the most significant contributions of heteroepitaxy in these and some other areas—the strong impact o... see more

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states... see more

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed ... see more

Abstract. Purpose. The purpose of this work was to analyze the effect of structural rearrangements in the metal matrix of cast iron near graphite inclusions occurring at the meso-level with the complex effect of physical fields on the formation and growth... see more

The growth of single crystalline films (SCFs) with excellent scintillation properties based on the Tb1.5Gd1.5Al5-yGayO12:Ce mixed garnet at y = 2–3.85 by Liquid Phase Epitaxy (LPE) method onto Gd3Al2.5Ga2.5O12 (GAGG) substrates from BaO based flux is repo... see more

In this paper, we demonstrated the growth of GaAs/GaSb core-shell heterostructured nanowires on GaAs substrates, with the assistance of Au catalysts by molecular-beam epitaxy. Time-evolution experiments were designed to study the formation of GaSb shells ... see more

A review of computer simulation studies on crystal growth in hard-sphere systems is presented. A historical view on the crystallization of hard spheres, including colloidal crystallization, is given in the first section. Crystal phase transition in a syst... see more

Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1-xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorpor... see more

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mism... see more

1 of 3.937 pages  |  10  records  |  more records»