ARTICLE
TITLE

The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

SUMMARY

We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si1-x_{1-x}Gex_x/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si0.2_{0.2}Ge0.8_{0.8}/Si quantum well on the channel width varying from 25 - 70Å

PAGES
pp. 319
COLLECTIONS
Physical

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