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7  Articles
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This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE) using a 0.25 µm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedanc... see more

In this paper, we present an all-in-one wafer-level solution for MMIC (monolithic microwave integrated circuit) automatic testing. The OSL (open short load) two tier de-embedding, the calibration verification model, the accurate PAE (power added efficienc... see more

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output i... see more

This study investigates the dry etching of 60 mm dia, 200 mm deep holes for fabrication of through substrate via holes for grounding monolithic microwave integrated circuits (MMICs), on 3-inch dia semiinsulating GaAs wafer using RIE and ICP processes with... see more
GaAs |  MMIC |  Via-hole |  ICP |  RIE |  etching

The ICsIMMICs attained importance in the field of microelectronics as these play a majorrole in the aerospace industry. The reliability of the ICsIMMICs becomes the critical issue becauseof complex material properties. A methodology has to be adopted whic... see more

Nowadays, more and more MMICs (Microwave Monolithic Integrated Circuit), such as limiters and switches, are designed to have balanced and unbalanced test pad structures to solve the challenging size restrictions and integration requirements for MMICs. Hyb... see more

Thermal management is the most significant topic for a thermo-mechanical satellite design. If the lift-off phase represents the major contribution to the mechanical solicitation field about the spacecraft structure, the thermal management topic is the all... see more

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