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266  Articles
1 of 28 pages  |  10  records  |  more records»
Among many emerging nanoelectronic devices, single-electron transistor (SET) is one of the frontier device architectures that can offer high operating speed at an ultra-low power consumption. It exploits controlled electron tunneling to amplify current an... see more

K? thu?t di?n môi c?c c?ng d? c?u trúc không ch? giúp gi?m dòng lu?ng c?c mà còn làm tang dòng m? c?a transistor tru?ng xuyên h?m (tunnel field-effect transistr (TFET)). D?a trên mô ph?ng hai chi?u, chúng tôi nghiên c?u vai trò và thi?t k? c?a l?p di?n mô... see more

The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as 1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose. Relaxation oscillators are wid... see more

Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linea... see more

The cutoff frequency performance of an NPN Si/SiGe/SiGe single-heterojunction bipolartransistor (SiGe SHBT) at high collector current densities has been analysed using a 2-D MEDICIdevice simulator. A conventional NPN Si/SiGe/Si double-heterojunction bipol... see more

The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as 1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose. Relaxation oscillators are wid... see more

The processes of a selective epitaxy of silicon layers on the structures Si-SiO2-Si*, formation of dielectric isolation and diffusive areas of complementary bipolar transistor structures are optimized in the work. Complete dielectric isolation of elements... see more

Low power consumption, small device size and better controlled onto the charge carriers are the factors, that made Single-electron transistor (SET) a suitable candidate for molecular electronics; yet there are some improvements that can be done in order t... see more

In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations. All calculations have been e... see more

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