SUMMARY
In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.